1 n-channel 30-v (d-s) mosfet features ? halogen-free ? t renchfet ? gen iii power mosfet ? 100 % r g tested ? 100 % avala nche tested applications ? low -side switch for dc/dc converters - servers - pol - vrm ? or-ing product summa ry v ds (v) r ds (on) ( ) i d (a) a, g q g (t yp .) 30 0.0041 at v gs = 10 v 60 g 34 nc 0.0059 at v gs = 4. 5 v 60 g n-channel mosfet g d s notes: a. based on t c = 25 c . b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. absolute maximum ratings t a = 25 c, unless otherwise noted paramet er symbol lim it unit drain-source voltage v ds 30 v gate -source v oltage v gs 20 continuous d r ain current (t j = 150 c ) t c = 25 c i d 60 g a t c = 70 c 60 g t a = 25 c 36 b, c t a = 70 c 29 b, c pulsed dra i n current i dm 80 contin uous sou r ce-drain diode current t c = 25 c i s 60 g t a = 25 c 4.9 b, c single pulse a v alanche current l = 0.1 mh i as 50 single pulse av alanche energ y e as 125 mj maxi m um power dissipation t c = 25 c p d 83 w t c = 70 c 53 t a = 25 c 5.4 b, c t a = 70 c 3.4 b, c oper ating junction and storage temperature range t j , t stg - 55 to 150 c solder in g recommendations (p eak temperature) 260 thermal resist ance rat ings p arameter symb ol t ypical maximum un it maxim um junction-to-ambient t 10 s r thja 18 23 c / w maximum junction-to-case (drain) steady state r thjc 1.0 1.5 rohs compliant to-252 s gd top v ie w www.din-tek.jp dt u06n03
2 not e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specif ications t j = 25 c, unless otherwise noted pa ram e ter sy mbol t est c onditions min. typ. max. unit static drain-source breakdown v oltage v ds v gs = 0 v, i d = 250 a 30 v v ds temper ature coefficient ' v ds /t j i d = 250 a 28 mv/c v gs(t h) temper ature coefficient ' v gs(t h) /t j - 6. 6 gate-s ource threshold voltage v gs(t h) v ds = v gs , i d = 250 a 1.2 2.5 v gate-s ource leakage i gss v ds = 0 v, v gs = 20 v 100 na z ero gate v oltage drain current i dss v ds = 30 v , v gs = 0 v 1 a v ds = 30 v , v gs = 0 v, t j = 55 c 10 on-state dr ain current a i d( on) v ds t 5 v, v gs = 10 v 30 a drain-source on-state re sista nce a r ds( o n ) v gs = 10 v , i d = 20 a 0.0031 0.0041 : v gs = 4.5 v, i d = 20 a 0.0043 0.005 9 f orward transconductance a g fs v ds = 10 v, i d = 20 a 100 s dynam i c b input capacita n ce c iss v ds = 15 v, v gs = 0 v, f = 1 mhz 4590 pf output capacitance c oss 810 re v erse t ransfer capacitance c rss 320 to tal gate charge q g v ds = 15 v, v gs = 10 v, i d = 20 a 74 110 nc v ds = 15 v, v gs = 4.5 v, i d = 20 a 34 51 gate-so urce charge q gs 12 gate-dra in charge q gd 10 gate re sistance r g f = 1 mhz 0.2 0.8 1.6 : tu r n - o n d e l ay t i m e t d(o n) v dd = 15 v, r l = 1.5 : i d # 10 a, v gen = 10 v, r g = 1 : 19 35 ns rise time t r 510 t ur n-off delay time t d(off) 45 85 fa l l time t f 510 tu r n - o n d e l ay t i m e t d( o n) v dd = 10 v, r l = 1 : i d # 10 a, v gen = 4.5 v, r g = 1 : 45 85 rise time t r 18 45 t ur n-off delay time t d(off) 60 110 fa l l time t f 30 60 drain- so urce body diode characteristics continuous source-drain diode current i s t c = 25 c 60 a pulse diode forward current a i sm 80 body diode voltage v sd i s = 4 a 0.72 1.1 v body diode re verse recovery time t rr i f = 10 a, di/dt = 100 a/s , t j = 25 c 33 50 ns body diode reverse recovery charge q rr 25 40 nc re verse recovery fall time t a 16 ns re v erse reco very rise time t b 17 z z z g l q w h n m s ' 7 8 1
3 typica l c har acteristics 25 c, unless otherwise noted output charac teristic s on-resistance vs. drain current and gate voltage gate charge 0 16 32 4 8 64 8 0 0.0 0.5 1.0 1.5 2.0 2.5 v ds - drain- to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs =10t h r u 4 v v gs =3 v 0.0015 0.003 0.0041 0.0024 0.0027 0.0030 014 2 8 42 56 70 - on- r esistance ( ) r ds(on) i d - drain c u rrent (a) v gs =10 v v gs =4. 5 v 0 2 4 6 8 10 016 3 24 8 64 8 0 - gate- t o-so u rce v oltage ( v ) q g - t otal gate charge (nc) v gs v ds =20 v v ds =15 v v ds =10 v i d =10a transfer ch aracteristics cap acitance on-resistance vs. junction temperature 0 1 2 3 4 5 0123 45 v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d t c = 25 c t c = 125 c t c = - 55 c c rss 0 1200 2400 3600 4 8 00 6000 0 6 12 1 8 24 30 c iss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) c oss 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 t j -j u nction t emperat u re (c) ( n ormalized) - on - r esistance r ds(on) i d =20a v gs =4. 5 v v gs =10 v www.din-tek.jp dt u06n03
4 ty pi cal ch aracteristics 25 c, unless otherwise noted sour ce-drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 v sd -so u rce - to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c - 1.0 - 0.7 - 0.4 - 0.1 0.2 0.5 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(t h) t j - t emperat u re (c) i d =5ma on-resistan ce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.002 0.004 0.006 0.00 8 0.010 012345 67 8 91 0 - on-r esistance ( ) r ds(on) v gs - g ate -to-so u rce v oltage ( v ) t j =2 5 c t j = 125 c 0 40 8 0 120 160 200 0 1 1 1 00. 00 . 0 1 time (s) po w er ( w ) 0.1 safe oper a ting area, junction-to-ambient 0.01 100 1 100 0.01 - drain c u rrent (a) i d 0.1 v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 t a = 25 c single p u lse limited b yr ds(on) * 1s dc 10 s b v dss limited www.din-tek.jp dt u06n03
5 typica l c har acteristics 25 c, unless otherwise noted * th e power dissipation p d is ba se d on t j(max) = 150 c , using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 34 6 8 102 136 170 0 2 55 075100125150 t c - case t emperat u re (c) i d - drain c u rrent (a) package limited powe r, ju nction-to-case 0 20 40 60 8 0 100 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) www.din-tek.jp dt u06n03
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 single p u lse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 6 5 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rfa c e mo u nted d u ty cycle = 0.5 0.02 normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 d u ty c ycle = 0.5 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.05 0.02 single p u lse 0.1 www.din-tek.jp dt u06n03
1 to-252aa case outline note ? d imension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters i n ches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
1 disclaimer all pro d uct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
|
